Immersion exposure technique

ABSTRACT

It is an object of this invention to provide an exposure technique which uses immersion method and is highly practical. For example, an exposure apparatus includes a substrate stage which holds and moves a substrate, and a supply unit which has a supply nozzle and supplies a liquid to the surface of the substrate. The opening of the supply nozzle is arranged at a side of a projection optical system so as to oppose the substrate, and the supply unit supplies the liquid in accordance with movement of the substrate by the substrate stage.

FIELD OF THE INVENTION

The present invention relates to an exposure technique for exposing asubstrate coated with a photosensitive material to a pattern inmanufacturing a device such as a semiconductor device, liquid crystaldisplay device, or the like and, more particularly, to an exposuretechnique using immersion method.

BACKGROUND OF THE INVENTION

The manufacturing process of a semiconductor device with asubmicroscopic pattern such as an LSI, VLSI, or the like employs areduction projection exposure apparatus which reduces and projects apattern formed on a mask and transfers it onto a substrate coated with aphotosensitive agent. Along with an increase in integration degree ofsemiconductor devices, finer patterns have been demanded. Concurrentlywith development of resist processes, measures have been taken againstexposure apparatuses for miniaturizing patterns.

To improve the resolution of an exposure apparatus, a method ofshortening the exposure wavelength or a method of increasing thenumerical aperture (NA) of the projecting optical system is generallyemployed.

As for the exposure wavelength, a KrF excimer laser with an oscillationwavelength of 365-nm i-line to recently around 248 nm, and an ArFexcimer laser with an oscillation wavelength around 193 nm have beendeveloped. A fluorine (F₂) excimer laser with an oscillation wavelengtharound 157 nm is also under development.

As another technique for increasing the resolution, a projectionexposure method using immersion is receiving attention. Conventionally,the space between the final surface of a projection optical system and asubstrate (e.g., a wafer) to be exposed is filled with a gas. Immersionperforms projection exposure by filling this space with a liquid. Forexample, assume that pure water (whose refractive index is 1.33) is tobe provided to the space between a projection optical system and awafer, and the maximum incident angle of light beams which form an imageon the wafer in immersion is equal to that in a conventional method. Inthis case, the resolution in immersion becomes 1.33 times higher thanthat in the conventional method even when a light source having the samewavelength is used in each method. This is equivalent to an increase inNA of the projection optical system in the conventional method by afactor of 1.33. Immersion makes it possible to obtain a resolution whoseNA is 1 or more, which cannot be attained by the conventional method.

To fill the space between the final surface of a projection opticalsystem and a wafer surface, mainly two types of methods have beenproposed.

One of them is a method of placing the final surface of the projectionoptical system and the entire wafer in a liquid tank. Japanese PatentLaid-Open No. 6-124873 discloses an exposure apparatus using thismethod.

The other is a method of supplying a liquid only to the space betweenthe projection optical system and the wafer surface, i.e., a local fillmethod. WO99/49504 discloses an exposure apparatus using this method.

In the method disclosed in Japanese Patent Laid-Open No. 6-124873, aliquid may splash about when a wafer moves at high velocity, andequipment is required to recover such splashes. Also, micro-bubblescaused by the wavy liquid surface may adversely affect the imagingperformance. In addition, this method may increase the complexity andsize of the apparatus.

In the method disclosed in WO99/49504, assume that the gap between awafer and a projection optical system is small. In this case, even whena nozzle is directed toward the gap, and a liquid is supplied to thegap, the liquid discharged from the nozzle does not flow into the gap,and a gas remains in the gap. For this reason, satisfactory immersioncannot be performed. A liquid having failed to flow into the gapcollides with the perimeter of a projection lens and escapes externally.Equipment for recovering the liquid needs to be provided around theperimeter, and the size of the exposure apparatus increases. Even if aliquid can be supplied into the small gap, since the flow resistanceinside the gap is larger than that outside the gap, the flow velocity ofthe liquid discharged from the nozzle is much higher than that in thegap. For this reason, the flow velocity changes excessively at the tipof the nozzle or at a portion where the liquid collides with theperimeter of the projection lens, the flow is greatly disturbed, and airbubbles may be generated. These air bubbles may enter the gap betweenthe projection lens and the wafer, may prevent transmission of light,and may adversely affect the imaging performance of the exposureapparatus.

In the method disclosed in WO99/49504, a liquid supplied onto the waferneeds to be recovered at least every wafer replacement, and theproductivity of the apparatus must be sacrificed to recover the liquid.Recovery of a liquid on the wafer means recovering a liquid below theprojection lens. For this reason, a part of the lower surface of theprojection lens can get wet every wafer replacement, another part can becoated with a thin liquid film, and still another part can directly beexposed to the outer air. The environment surrounding the projectionlens and wafer contains impurities in larger amounts in comparison withthe supplied liquid, and a liquid staying on the lower surface of theprojection lens may absorb an impurity contained in the outer air. Theliquid staying on the lower surface of the projection lens evaporates tothe outer air, and the impurity originally contained in the liquid or animpurity absorbed from the outer air condenses in the liquid. As aresult, an impurity may be attached to the surface of the projectionlens to cause clouds or the impurity may remain as a residue after theevaporation/drying of the liquid on the surface of the projection lensto cause clouds.

SUMMARY OF THE INVENTION

The present invention has been made in consideration of theabove-mentioned problems, and has as its object to increase thepracticality of an exposure technique using immersion method and, forexample, more reliably fill the gap between the final surface of aprojection optical system and a substrate with a liquid, suppresscontamination on the final surface of the projection optical system,simplify the structure of an exposure apparatus, reduce the size of theexposure apparatus, or the like.

According to the first aspect of the present invention, there isprovided an exposure apparatus which exposes a substrate to a patternthrough a projection optical system, the apparatus comprising asubstrate stage which holds and moves the substrate and a supply unitwhich has a supply nozzle and supplies a liquid to a surface of thesubstrate, an opening of the supply nozzle being arranged at a side ofthe projection optical system so as to oppose the substrate, and thesupply unit supplying the liquid in accordance with movement of thesubstrate by the substrate stage.

According to the second aspect of the present invention, there isprovided an exposure apparatus which exposes a substrate to a patternthrough a projection optical system, the apparatus comprising asubstrate stage which holds and moves the substrate, a movable flatplate, a supply unit which supplies a liquid to at least one of aportion between a final surface of the projection optical system and thesubstrate and a portion between the final surface and the flat plate,and a recovery unit which recovers the liquid from at least one of aportion between the final surface and the substrate and a portionbetween the final surface and the flat plate.

According to the third aspect of the present invention, there isprovided an exposure apparatus which exposes a substrate to a patternthrough a projection optical system, the apparatus comprising asubstrate stage which holds and moves the substrate, an opposing memberwhich extends from an end portion of a final surface of the projectionoptical system and has a surface opposing the substrate, and a supplyunit which supplies a liquid to a surface of the substrate through anoutlet port formed in the opposing surface.

According to the fourth aspect of the present invention, there isprovided an exposure apparatus which exposes a substrate to a patternthrough a projection optical system, the apparatus comprising asubstrate stage which holds and moves the substrate, a supply unit whichsupplies a liquid to a space between a final surface of the projectionoptical system and the substrate through a supply port, and a ejectingportion which ejects a gas toward the substrate through an ejecting portformed outside the supply port with respect to the final surface.

According to the fifth aspect of the present invention, there isprovided an exposure method of exposing a substrate to a pattern througha projection optical system, the method comprising steps of moving thesubstrate by a substrate stage, and supplying a liquid to a surface ofthe substrate through a supply nozzle, an opening of the supply nozzlebeing arranged at a side of the projection optical system so as tooppose the substrate, and in the supply step, the liquid being suppliedin accordance with movement of the substrate by a substrate stage.

According to the sixth aspect of the present invention, there isprovided an exposure method of exposing a substrate to a pattern througha projection optical system, the method comprising steps of moving thesubstrate by a substrate stage, moving a movable flat plate, supplying aliquid to at least one of a portion between a final surface of theprojection optical system and the substrate and a portion between thefinal surface and the flat plate, and recovering the liquid from atleast one of a portion between the final surface and the substrate and aportion between the final surface and the flat plate.

According to the seventh aspect of the present invention, there isprovided a device manufacturing method comprising a step of exposing asubstrate to a pattern using any one of the above exposure apparatusesof the present invention.

Other features and advantages of the present invention will be apparentfrom the following description taken in conjunction with theaccompanying drawings, in which like reference characters designate thesame or similar parts throughout the figures thereof.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated in and constitute apart of the specification, illustrate embodiments of the invention and,together with the description, serve to explain the principles of theinvention.

FIG. 1 is a view schematically showing the arrangement of a preferredembodiment of the present invention;

FIGS. 2A to 2G are sectional views schematically showing steps offilling with a liquid the gap between a projection optical system and awafer;

FIG. 3 is a view showing the first arrangement example of a liquidsupply nozzle and liquid recovery nozzle in an exposure apparatusaccording to the preferred embodiment of the present invention;

FIG. 4 is a view showing the second arrangement example of the liquidsupply nozzle and liquid recovery nozzle in the exposure apparatusaccording to the preferred embodiment of the present invention;

FIG. 5 is a view showing the third arrangement example of the liquidsupply nozzle and liquid recovery nozzle in the exposure apparatusaccording to the preferred embodiment of the present invention;

FIG. 6 is a view showing the fourth arrangement example of the liquidsupply nozzle and liquid recovery nozzle in the exposure apparatusaccording to the preferred embodiment of the present invention;

FIG. 7 is a view showing the fifth arrangement example of the liquidsupply nozzle and liquid recovery nozzle in the exposure apparatusaccording to the preferred embodiment of the present invention;

FIG. 8 is a view schematically showing part of the arrangement ofanother preferred embodiment of the present invention;

FIGS. 9A to 9D are sectional views showing steps of feeding a flat platebelow a projection optical system in an exposure apparatus according tothe embodiment shown in FIG. 8;

FIGS. 10A to 10D are sectional views showing another step of feeding theflat plate below the projection system in the exposure apparatusaccording to the embodiment shown in FIG. 8;

FIGS. 11A to 11D are sectional views showing a step of generating aliquid film below the projection optical system in the exposureapparatus according to the embodiment shown in FIG. 8;

FIGS. 12A to 12C are sectional views showing another step of generatinga liquid film below the projection optical system in the exposureapparatus according to the embodiment shown in FIG. 8;

FIG. 13 is a view showing the sixth arrangement example of the liquidsupply nozzle and liquid recovery nozzle in the exposure apparatusaccording to the embodiment shown in FIG. 8;

FIG. 14 is a view showing the seventh arrangement example of the liquidsupply nozzle and liquid recovery nozzle in the exposure apparatusaccording to the embodiment shown in FIG. 8;

FIG. 15 is a view showing an arrangement example of a nozzle unit(nozzle unit comprising a plurality of nozzles) in the exposureapparatus according to the embodiment shown in FIG. 8;

FIG. 16 is a view showing an application of the nozzle unit shown inFIG. 15; and

FIG. 17 is a flowchart showing the whole manufacturing process of asemiconductor device.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

An exposure apparatus according to the present invention is useful to,e.g., all exposure methods and exposure apparatuses that use ultravioletlight as exposure light and uses immersion in which the gap between aprojection optical system and a substrate (e.g., a wafer) is filled witha liquid. These exposure apparatuses can include, e.g., one whichprojects and transfers a pattern on a master onto a substrate while thesubstrate is in a stationary state and one which performs scanningexposure for a substrate to a pattern on a master using slit light whilesynchronously scanning the substrate and master.

A preferred embodiment of the present invention will be illustratedbelow. FIG. 1 is a view schematically showing the arrangement of thepreferred embodiment of the present invention. In FIG. 1, light emittedfrom an exposure light source (not shown) such as an ArF excimer laseror F₂ laser is supplied to an illumination optical system 2. Theillumination optical system 2 uses the light supplied from the exposurelight source to illuminate part of a reticle (master) 1 with slit light(light having a sectional shape as if it passed through a slit). Whileilluminating the reticle 1 with the slit light, a reticle stage (masterstage) 3 holding the wafer stage 10 and a wafer stage (substrate stage)10 holding a wafer (substrate) 9 perform scanning movement insynchronism with each other. Through this synchronous scanning, an imageof the entire pattern on the reticle 1 is continuously formed on thewafer 9 through a projection optical system 4 to expose to light aresist applied to the surface of the wafer 9.

The two-dimensional positions of the reticle stage 3 and wafer stage 10are measured in real time by a reference mirror 11 and distancemeasurement laser interferometer 12, respectively. A stage controlapparatus 13 performs alignment and synchronous control for the reticle1 (reticle stage 3) and wafer 9 (wafer stage 10) on the basis ofmeasurement values from the reference mirror 11 and distance measurementlaser interferometer 12. The wafer stage 10 incorporates a driving unitwhich adjusts, changes, or controls the vertical position, rotationaldirection, and tilt of the wafer 9. In exposure, the driving unitcontrols the wafer stage 10 such that an exposure region on the wafer 9precisely coincides with the focal plane of the projection opticalsystem 4. The position (vertical position and tilt) of the upper surfaceof the wafer 9 is measured by an optical focus sensor (not shown) and issupplied to the stage control apparatus 13.

An exposure apparatus main body is placed in an environment chamber (notshown), and the environment of the exposure apparatus main body is keptat a predetermined temperature. Temperature-controlled air for airconditioning is separately supplied to a space surrounding the reticlestage 3, wafer stage 10, and distance measurement laser interferometer12 and a space surrounding the projection optical system 4, therebymaintaining the ambient temperature at higher precision.

In this embodiment, immersion in which the space or gap between theprojection optical system 4 and the wafer 9 is filled with a liquid isimplemented by a liquid supply nozzle 5 arranged above the wafer 9 andin the vicinity of the projection optical system 4 and a liquid recoverynozzle 6 opposing the liquid supply nozzle 5 through the projectionoptical system 4.

Immersion to be performed in this embodiment will be described below indetail. The liquid supply nozzle 5 is arranged upstream in a directionin which the wafer 9 is scanned during exposure and in the vicinity ofthe projection optical system 4. For example, if the wafer is to bemoved from right to left, i.e., leftward (second direction), theupstream of the scanning direction is on the right (first direction).More specifically, if the scanning direction (second direction) isindicated by an arrow, the side of the starting point of the arrow(first direction) is the upstream. The liquid recovery nozzle 6 opposesthe liquid supply nozzle 5 (i.e., downstream in the scanning direction)through the projection optical system 4.

The liquid supply nozzle 5 is connected to a liquid supply unit 7through a supply pipe 16. Similarly, the liquid recovery nozzle 6 isconnected to a liquid recovery unit 8 through a recovery pipe 17. Theliquid supply unit 7 can include a tank which stores a liquid, apressure feed unit which feeds the liquid, and a flow controller whichcontrols the supply flow rate of the liquid. The liquid supply unit 7preferably further includes a temperature controller for controlling thesupply temperature of the liquid. The liquid recovery unit 8 caninclude, e.g., a tank which temporarily stores a recovered liquid, asuction unit which sucks the liquid, and a flow controller forcontrolling the recovery flow rate of the liquid. An immersioncontroller 18 receives information such as the current position,velocity, acceleration, target position, and moving direction of thewafer stage 10 from the stage control apparatus 13 and givesinstructions to start or stop immersion, control the flow rate, and thelike to the liquid supply unit 7 and liquid recovery unit 8 on the basisof this information.

As an immersion liquid, one which absorbs little exposure light isselected. The immersion liquid desirably has a refractive index almostequal to that of a dioptric element made of, e.g., quartz or fluorite.More specifically, examples of the immersion liquid include pure water,functional water, a fluorinated solution (e.g., fluorocarbon), and thelike. A dissolved gas is preferably well removed from the immersionliquid using a degasifier. This aims at suppressing generation of airbubbles and immediately absorbing any generated air bubbles in theliquid. For example, if nitrogen and oxygen, which are contained inlarge quantity in the environmental gas, are removed from the liquid by80% or more of the maximum permissible gas content of the liquid,generation of air bubbles can sufficiently be suppressed. The exposureapparatus may be provided with a degasifier (not shown) and may supply aliquid to the liquid supply unit 7 while removing a gas dissolved in theliquid. As the degasifier, e.g., a vacuum degasifier is preferably used.This vacuum degasifier supplies a liquid to one side of a gas-permeablefilm, evacuates the other side to a vacuum, and traps a gas dissolved inthe liquid into the vacuum through the film.

A step of filling a liquid between the projection optical system 4 andthe wafer 9 will be described with reference to FIGS. 2A to 2G.

While the wafer 9 is in a stationary state or is moving, the liquidsupply nozzle 5 supplies a liquid f onto the wafer 9 at, e.g., aconstant flow rate to bring the liquid into intimate contact with thelower surface of the liquid supply nozzle 5 and the upper surface of thewafer 9. With this operation, a satisfactory liquid film is formed (FIG.2A).

The wafer 9 starts moving or further moves while continuously supplyingthe liquid from the liquid supply nozzle 5. The movement of the wafer isused to guide the liquid film below the projection optical system 4without breaking the liquid film (formed in FIG. 2A) (FIGS. 2B and 2C).

When the wafer 9 further moves to reach an exposure start position,scanning exposure using slit light starts (FIG. 2D). During the slitexposure, the liquid supply nozzle 5 continuously supplies the liquid,as described with reference to FIG. 2C, and the liquid recovery nozzle 6starts recovering the liquid flowing from the downstream side (on theleft in FIGS. 2A to 2G) of a scanning direction S with respect to theprojection optical system 4. With this operation, a space between thewafer 9 and the projection optical system 4 is stably filled with theliquid (FIG. 2D).

When the wafer 9 further moves to reach an exposure end position, theexposure using the slit light ends (FIG. 2E). Upon completion of theexposure using the slit light, the liquid supply nozzle 5 stopssupplying the liquid (FIG. 2E). The liquid recovery nozzle 6 recoversthe liquid left on the wafer 9 while moving the wafer 9 in the scanningdirection S (FIGS. 2F an 2G).

If the liquid is continuously supplied onto the surface of the wafer 9while moving the wafer 9 such that a liquid film expands along with themovement of the wafer 9, as described above, the gap between the finalsurface of the projection optical system 4 and the wafer can be filledwith a continuous liquid film. This method can more reliably form aliquid film in the gap between the projection optical system 4 and thewafer 9 even when the gap is small and can more greatly reduce airbubbles in the liquid film, than a method disclosed in WO99/49504 ofdirecting a nozzle toward the gap between the projection optical system4 and the wafer 9 and supplying a liquid toward the gap. Also, accordingto this method, the liquid film moves at a lower velocity than the waferand thus can reliably be recovered through the liquid recovery nozzle 6.Thus, outward splashes of the liquid can effectively be prevented.

A sequence for supplying and recovering a liquid as described above maybe performed for each exposure shot region (each transfer of a reticleimage). Alternatively, the sequence may be performed for all or some ofthe exposure shot regions on the wafer. In the latter case, supply andrecovery of a liquid may be or may not be performed during stepping ofthe wafer between the exposure shot regions.

The above-mentioned immersion can be applied to an exposure apparatuswhich exposes a wafer while the wafer is in a stationary state (e.g., aso-called stepper). In this case, when, e.g., the wafer is steppedbetween exposure shot regions, supply and recovery of a liquid ispreferably controlled so as to expand a liquid film between an exposureshot region to be exposed next and the lower surface of the projectionoptical system 4.

Preferred examples of the detailed structures and layout of the liquidsupply nozzle 5 and liquid recovery nozzle 6 will be described withreference to FIGS. 3 to 7.

FIG. 3 is a plan view as seen from above, obtained by cutting theexposure apparatus in FIG. 1 above the wafer 9. The liquid supply nozzle5 is arranged upstream (in the −X direction as seen from the projectionoptical system 4), in a moving direction S (in the +X direction as seenfrom the projection optical system 4) of the wafer 9, of a final surface4 s of the projection optical system 4 while the liquid recovery nozzle6 is arranged downstream (in the +X direction as seen from theprojection optical system 4). When the exposure apparatus is a scanner(scanning exposure apparatus), the moving direction of the wafer 9 isdesirably the same as the scanning direction of the wafer in exposure inorder to stably form a liquid film.

The liquid supply nozzle 5 is preferably arranged such that its lowersurface (lower end) is flush with or higher than the final surface(lower surface) 4 s of the projection optical system 4. With thisarrangement, a liquid can move together with the wafer in intimatecontact with the final surface of the projection optical system 4 whileeliminating an air layer. This prevents inclusion of air bubbles in aliquid film.

The liquid recovery nozzle 6 is preferably arranged such that its lowersurface (lower end) is flush with or higher than the final surface(lower surface) 4 s of the projection optical system 4. With thisarrangement, a liquid on the wafer can efficiently be recovered whilepreventing a failure to recover the liquid (incomplete recovery).

A total length L1 of an outlet port through which the liquid supplynozzle 5 discharges a liquid is preferably equal to or larger than alength Le of a region through which exposure light beams pass and ismore preferably equal to or larger than the width of the final surface 4s of the projection optical system 4. A length L2 of the liquid recoverynozzle 6 is preferably equal to or larger than the length L1 of theliquid discharge port of the liquid supply nozzle 5 and is morepreferably equal to or larger than the width of the final surface 4 s.

A flow rate V of a liquid to be supplied from the liquid supply nozzle 5to a space (immersion space) between the wafer 9 and the lower surfaceof the projection optical system 4 is desirably determined in accordancewith equation (1):V . L1.d..  (1)

where d is a thickness of the space between the wafer and the finalsurface (lower surface) of the projection optical system 4, and . is amoving velocity of the wafer in immersion and is a scanning velocity ofthe wafer in scanning exposure.

Letting . be a mean velocity of a liquid, to be supplied from the liquidsupply nozzle 5 to the immersion space, at the liquid discharge port ofthe liquid supply nozzle 5, the flow rate V of the liquid is given byequation (2)V=L1.w..  (2)where w is a width of the liquid discharge port. Equation (3) is derivedfrom equations (1) and (2):. .d../w(3)

More generally, the flow rate of the liquid to be supplied is preferablydetermined such that the mean velocity at the liquid discharge port ofthe liquid supply nozzle 5 (i.e., the supply flow rate per unit area ofthe discharge port) is equal to or larger than the quotient obtained bydividing, by the width w of the discharge port, the product of thethickness d of the gap between the final surface 4 s and the wafer 9 andthe moving velocity . of the wafer stage 10. In the strict definition, wis the minimum of the width of the liquid discharge port along themoving direction of the wafer 9 in the corresponding liquid supplynozzle 5.

To start exposure from an end portion of the wafer, a liquid film needsto be sufficiently grown below the final surface (lower surface) 4 s ofthe projection optical system 4 before the end portion of the waferreaches an exposure region (region to be irradiated with exposurelight). In the arrangement example shown in FIG. 3, a flush plate (flatplate) 19 almost flush with the wafer 9 is provided outside the wafer 9.This makes it possible to form a liquid film outside the wafer 9.

FIG. 4 is a view showing the second arrangement example of thestructures and layout of the liquid supply nozzle 5 and liquid recoverynozzle 6. The second arrangement example shown in FIG. 4 is differentfrom the first arrangement example shown in FIG. 3 in that the ports ofthe liquid supply nozzle 5 and liquid recovery nozzle 6 are arrangedwithin the surfaces (opposing surface opposing the wafer stage or wafer)of contiguous members 20 a and 20 b.

The bottom surfaces (opposing surfaces) of the contiguous members 20 aand 20 b are almost flush with the final surface 4 s. The edge of thefinal surface 4 s is so arranged as to come into intimate contact withthe outer surface of the lens barrel of the projection optical system 4.With this arrangement, an interval between the wafer 9 and the bottomsurface of the liquid supply nozzle 5, that between the wafer 9 and thebottom surface of the liquid recovery nozzle 6, and that between thewafer 9 and the final surface 4 s can be made almost equal to eachother, and the bottom surface of the liquid supply nozzle 5, the finalsurface 4 s, and the bottom surface of the liquid recovery nozzle 6 canconstitute contiguous surfaces.

This arrangement, in which the liquid supply nozzle 5 and liquidrecovery nozzle 6 are arranged within planes contiguous to the finalsurface 4 s, has the following advantage. More specifically, a liquidsupplied from the liquid supply nozzle 5 comes into intimate contactwith the wafer 9 and the bottom surface of the contiguous member 20 a,in which the liquid supply nozzle 5 is formed, to form a liquid film.This liquid film together with the wafer 9 moves toward the finalsurface 4 s, which is contiguous to the bottom surface of the contiguousmember 20 a. The liquid film can smoothly advances to the final surface4 s of the projection optical system 4 and then to the bottom surface ofthe contiguous member 20 b. In this manner, the final surface 4 s andthe members 20 a and 20 b contiguous to the final surface 4 s make itpossible to fill the entire gap between them and the wafer 9 with aliquid.

Since a liquid film always moves together with the wafer 9 while itsupper and lower surfaces are in intimate contact with planes, contact ofthe liquid film with the environment (gas) is substantially limited tothe side surfaces of the liquid film, and thus the contact area of theliquid film with the gas is small. The liquid film flows through almosta constant gap and hardly changes in velocity. For this reason, the flowof the liquid film hardly disorders, and air bubbles are unlikely to begenerated in the liquid film. Also, this reduces dissolution of a gas ina liquid and can suppress generation of micro-bubbles in the liquid filmdue to a change in temperature or a local change in pressure.

The contiguous members 20 a and 20 b may be like a thin plate or block,or may have any other shape as far as their bottom surfaces arecontiguous to the final surface (lower surface) 4 s of the projectionoptical system 4. The contiguous members 20 a and 20 b may be formed asportions integrated into the bottom surfaces of the nozzles 5 and 6and/or the bottom surface of the lens barrel of the projection opticalsystem 4.

FIG. 5 is a view showing the third arrangement example of the structuresand layout of the liquid supply nozzle 5 and liquid recovery nozzle 6.The third arrangement example shown in FIG. 5 is different from thesecond arrangement example shown in FIG. 4 in that the liquid supplynozzles 5 (5 a and 5 b) are arranged on both sides, respectively, of thefinal surface 4 s, and the liquid recovery nozzles 6 (6 a and 6 b) arearranged on both sides, respectively, of the final surface 4 s.

The liquid supply nozzles 5 a and 5 b are arranged relatively nearer tothe final surface 4 s of the projection optical system 4 so as tosandwich the projection optical system 4. On the other hand, the liquidrecovery nozzles 6 a and 6 b are arranged relatively farther from thefinal surface 4 s of the projection optical system 4, i.e., outside theliquid supply nozzles 5 a and 5 b.

While the wafer 9 moves in the +X direction indicated by an arrow shownin FIG. 5, the liquid supply nozzle 5 a supplies a liquid to the gapbetween the wafer 9 and the final surface 4 s, and the liquid supplynozzle 5 b does not supply the liquid. At this time, the liquid recoverynozzle 6 b can recover most of the liquid. However, the liquid may flowin a direction opposite to the liquid recovery nozzle 6 b, depending onthe flow rate of the liquid to be supplied from the liquid supply nozzle5 a. Under the circumstances, in addition to the liquid recovery nozzle6 b, the liquid recovery nozzle 6 a is operated to recover the liquidflowing in the opposite direction. This can prevent splashes or spillsof the liquid. In consideration of this effect, preferably, liquidrecovery nozzles are arranged so as to surround the perimeter of thefinal surface 4 s and are operated in supplying a liquid from the liquidsupply nozzles.

While the wafer 9 moves in the −X direction indicated by an arrow shownin FIG. 5, the liquid supply nozzle 5 b supplies a liquid, and theliquid supply nozzle 5 a does not supply the liquid, contrary to theabove-mentioned case. In this manner, the gap between the wafer 9 andthe final surface 4 s can always be filled with the liquid, regardlessof the moving direction of the wafer. By switching the supply of theliquid between both the nozzles 5 a and 5 b, even when the movingdirection of the wafer is reversed, the gap between the wafer 9 and thefinal surface 4 s can be filled with the liquid without breaking theliquid film (without dividing the liquid film).

The shape of the final surface 4 s need not be circular. For example, ifthe final surface 4 s is oval, and portions facing the nozzles arelinear, as shown in FIG. 5, the liquid supply nozzles 5 a and 5 b andliquid recovery nozzles 6 a and 6 b can be brought near to the opticalpath of exposure light beams. This can reduce the time required to fillthe gap with the liquid and the moving distance of the wafer. In thecase of a scanner, exposure light beams are slit-shaped on the surfaceof the wafer, and light beams each having a sectional shape which isshort in the scanning direction and is long in a direction perpendicularto the scanning direction are used in the final surface 4 s, which isclose to the wafer surface. The final surface of the projection opticalsystem 4 can be formed into a shape which is short in the scanningdirection such as an oval, in accordance with the sectional shape of thelight beams. The shape of the final surface of the projection opticalsystem is not limited to an oval, and the final surface can have variousshapes such as a rectangle, an arc, and the like.

FIG. 6 is a view showing the fourth arrangement example of thestructures and layout of the liquid supply and liquid recovery nozzles.In the fourth arrangement example shown in FIG. 6, liquid supply nozzles5 a to 5 d are provided on all sides surrounding the final surface 4 s,and liquid recovery nozzles 6 a to 6 d are further provided so as tosurround the liquid supply nozzles 5 a to 5 d. When the wafer moves inthe +X direction indicated by an arrow shown in FIG. 6, the liquidsupply nozzle 5 a arranged upstream in the moving direction of the wafersupplies a liquid. When the wafer moves in the −X direction indicated byan arrow shown in FIG. 6, the liquid supply nozzle 5 b supplies theliquid. Also, when the wafer moves in the +Y direction indicated by anarrow, a liquid supply nozzle 5 c supplies the liquid. When the wafermoves in the −Y direction indicated by an arrow, a liquid supply nozzle5 d supplies the liquid.

Since most of the liquid is recovered by the liquid recovery nozzlesarranged downstream in the moving direction of the wafer, only thedownstream recovery nozzles may be made to operate. However,simultaneous operation of all the four liquid recovery nozzles 6 a to 6d at least while they are supplying the liquid in preparation forunexpected events such as malfunctioning can more reliably preventsplashes or spills of the liquid. Instead of providing a plurality ofliquid recovery nozzles, one liquid recovery nozzle may be providedaround the sides of the final surface 4 s so as to surround the sides.The flow rate of the liquid to be supplied from the liquid recoverynozzles 6 a to 6 d is preferably determined in accordance with equation(3). With the above-mentioned arrangement, the moving direction of thewafer is not limited to the X or Y direction, and even if the wafermoves diagonally, the liquid film can be maintained.

As described above, a plurality of liquid supply nozzles are so arrangedas to surround the final surface 4 s, and one or more liquid supplynozzles for use in supply are switched between the liquid supply nozzlessuch that ones arranged upstream in the moving direction (the oppositeside of the moving direction as seen from the projection optical system)supply the liquid in wafer movement. With this operation, the gapbetween the final surface 4 s and the wafer 9 can always be suppliedwith the liquid regardless of the moving direction of the wafer. As aresult, the gap between the wafer 9 and the final surface 4 s can befilled with the liquid without breaking the liquid film not only duringscanning exposure but also during stepping within the surface of thewafer or in changing the moving direction of the wafer. This makes itpossible to, in one wafer, fill the gap between the final surface 4 sand the wafer 9 with the liquid without breaking the liquid film fromthe start of the exposure to when exposure of the entire wafer iscompleted. Consequently, the need for forming a liquid film for everyshot is eliminated, and the productivity of the exposure apparatusgreatly increases.

FIG. 7 is a view showing the fifth arrangement example of the structuresand layout of the liquid supply nozzles and liquid recovery nozzles. Inthis arrangement example, the liquid supply nozzles 5 a to 5 d andliquid supply nozzles 5 e to 5 h, and the liquid recovery nozzles 6 a to6 d and liquid recovery nozzles 6 e to 6 h are so arranged oncircumferences as to surround the perimeter of the final surface 4 s.The liquid supply nozzles are arranged inside the liquid recoverynozzles. The nozzles on the circumferences make it possible to fill thegap between the final surface 4 s and the wafer with the liquid bysupplying the liquid from one arranged almost upstream in the movingdirection and recovering the liquid by at least one arranged downstreamof the moving direction, even when the wafer stage 10 moves diagonally.

For example, when the wafer moves at an angle of 45° from the +X and +Ydirections, as indicated by an arrow shown in FIG. 7, the nozzles arepreferably controlled such that at least the liquid supply nozzles 5 band 5 c supply the liquid while at least the liquid recovery nozzles 6 fand 6 g recover the liquid. The layout of the nozzles on thecircumferences makes it possible to more flexibly form a correspondingliquid film in various moving directions of the wafer. FIG. 7 shows theplurality of divided liquid recovery nozzles. However, simultaneousoperation of all the liquid recovery nozzles 6 a to 6 h at least whilethey are supplying the liquid in preparation for unexpected events suchas malfunctioning can more reliably prevent splashes or spills of theliquid, as described in the fourth arrangement example. Instead ofproviding a plurality of liquid recovery nozzles, only one liquidrecovery nozzle may be provided around the perimeter of the finalsurface 4 s so as to surround the perimeter.

When the gap between the wafer and the final surface 4 s is not filledwith the liquid or when there is still gas in the gap due to incompletefilling with the liquid, the liquid is preferably supplied from upstreamin the moving direction of the wafer, as has been described above. Onthe other hand, after the gap between the wafer 9 and the final surface4 s is completely filled with the liquid, all liquid supply nozzles maysupply the liquid regardless of the moving direction of the wafer. Inthis case, the flow rate of the liquid to be supplied and that of theliquid to be recovered increase, and the running cost increases. On theother hand, supply nozzle switching need not be performed frequently,and the time required for switching is saved, thereby increasing theproductivity of the exposure apparatus. Also, the need for a drivingunit which switches between the supply nozzles is eliminated, and thesize of each liquid supply unit can be reduced. Control of liquid supplyis not limited to the arrangement example shown in FIG. 7 and can beapplied to the nozzle arrangements shown in FIGS. 5 and 6. In this caseas well, the same effect can be obtained.

In the arrangement example shown in FIG. 7, the flow rate of the liquidsupplied from the liquid supply nozzles may be determined by applyingequation (3) to each liquid supply nozzle. For the sake of simplicity,the liquid can be supplied uniformly from all the liquid supply nozzlesat the same flow rate. In the arrangement example shown in FIG. 7, sincethe discharge ports of the liquid supply nozzles are arrangedconcentrically about the exposure light beams, the width of the liquidsupply port is set to have a constant value w′ regardless of the movingdirection of the wafer. A total flow rate V′ is preferably determined inaccordance with equation (4):V′ . ..D.d..  (4)where . is the circular constant, D is the average diameter of thedischarge ports, d is an interval between the wafer and the finalsurface, and . is the moving velocity of the wafer.

Another preferred embodiment of the present invention will be describedwith reference to FIGS. 8 and 9A to 9D. FIG. 8 is a plan view of a waferstage 10 as seen from above nozzles arranged on a projection opticalsystem final surface 4 s and its surroundings. The discharge ports of aliquid supply nozzle 5 and liquid recovery nozzle 6 are so arranged asto oppose a wafer 9, and they should be drawn by hidden lines (brokenlines) in this plan view as seen from above, according to properdrawing. For the sake of illustrative simplicity, the discharge portsare drawn by solid lines.

A flat plate 21 is provided adjacent to the wafer 9 chucked on the waferstage 10. The flat plate 21 is so arranged as to be flush with the uppersurface of the wafer 9, which is fixed on the wafer stage 10 by vacuumchucking or the like. A wafer transport apparatus (not shown) isprovided to recover/mount the wafer 9 from/onto the wafer stage 10 whenthe flat plate 21 is located immediately below the final surface 4 s.

The steps in this embodiment will be described with reference to FIGS.9A to 9D. FIGS. 9A to 9D show operation of the units in order of thesteps, using the cross-sectional view of the main part of FIG. 8.

During exposure, a liquid is supplied from the liquid supply nozzle 5 asneeded and is recovered by the liquid recovery nozzle 6. In themeantime, the gap between the wafer 9 and the final surface 4 s is keptin a state in which the gap is always filled with the liquid (FIG. 9A).After an exposure sequence for one wafer 9 ends, the wafer stage 10 ismoved such that the flat plate 21, which is adjacent to the wafer 9, islocated immediately below the final surface 4 s (FIG. 9B). In moving thewafer stage 10, the liquid supply nozzle 5 continuously supplies theliquid while the liquid recovery nozzle 6 continuously recovers theliquid. With this operation, even when the flat plate 21 is locatedbelow the final surface 4 s, a space below the final surface 4 s isalways filled with the liquid. While keeping this state, the exposedwafer 9, which is chucked and fixed on the wafer stage 10, is recoveredfrom the wafer stage 10 to a wafer storage unit (not shown). Inaddition, a new wafer 9′ is mounted on the wafer stage 10 and is chuckedand fixed on the wafer stage 10 (FIG. 9C).

The wafer stage 10 is moved while the liquid supply nozzle 5continuously supplies the liquid, and the liquid recovery nozzle 6continuously recovers the liquid. The wafer 9′ is fed to immediatelybelow the final surface 4 s while filling the space below the finalsurface 4 s with the liquid (FIG. 9D).

This movement of the flat plate 21 to an exposure position whilecontinuously supplying and recovering the liquid even after the exposuremakes it possible to recover most of the liquid on the wafer.Accordingly, wafer replacement can smoothly be performed without anyspecial liquid recovery operation, and the productivity of exposureapparatuses can be increased. Since the final surface 4 s is alwaysfilled with the liquid regardless of whether the wafer replacement isbeing performed, no impurity contained in the ambient atmospheredirectly comes into contact with the final surface 4 s. Additionally,the contact area between the liquid and the air is minimized, and thusthe amount of impurities to be absorbed in the liquid can be minimized.Thus, any cloud due to the impurities can be suppressed in the finalsurface 4 s.

When the liquid is recovered every time wafer replacement is performed,a thin liquid film is temporarily attached to the surface of the finalsurface 4 s. If the liquid is pure water or the like, inorganiccomponents or hydrophilic organic components contained in theenvironment are likely to be absorbed in the film of pure water. Afterthe pure water evaporates, the inorganic components or organiccomponents are highly likely to remain on the surface of the projectionoptical system, thereby causing a cloud.

As shown in FIGS. 9B and 9C, during replacement of wafers on the waferstage 10, a liquid film is maintained between the final surface 4 s andthe flat plate 21. Immediately before this state, the liquid film hadcome into contact with the surface of a photosensitive agent applied tothe wafer and had received exposure light. When the photosensitive agentis exposed, components contained in the photosensitive agent arereleased in any event as gas-like substances, and these gas-likesubstances may be dissolved in the liquid film, which is in contact withthe upper surface of the photosensitive agent.

Immediately after the exposure, the gas-like substances are dissolved inthe liquid film, and the liquid film is contaminated. The liquid film ispreferably replaced with a new one before the start of the nextexposure. Otherwise, the dissolved impurities change the transmittanceof the liquid film and adversely affect exposure amount control.Degradation in productivity of exposure apparatuses such as variationsin line width may occur. Furthermore, the dissolved impurities may besupersaturated and may appear as air bubbles, thereby causing poorimaging. The impurities dissolved in the liquid film cause a chemicalreaction by exposure light, and may cause clouds in the final surface.Under the circumstances, these problems and solutions to them will beconsidered.

While the liquid supply nozzle 5 continuously supplies a new liquid, andthe liquid recovery nozzle 6 continuously recovers the liquid, theliquid film will be replaced with the new liquid even when thereplacement rate is low. Accordingly, in some cases, only supply andrecovery by the nozzles 5 and 6 may increase the purity of the liquidfilm to a level enough for the next exposure on the wafer 9 or flatplate 21. If the flow rate of the supply or recovery is increasedimmediately after exposure and is returned to the original flow rateimmediately before exposure, the purity of the liquid film can furtherbe increased. In this case, if the wafer 9 and flat plate 21 are movedalong with a change in flow rate, and the moving velocities of the wafer9 and flat plate 21 are changed along with the change in flow rate, thereplacement rate of the liquid rate increases. Supplying and recoveringthe liquid while reciprocating or rotating the wafer 9 or flat plate 21is more preferable because liquid films can be replaced continuously.

This increase or decrease in supply flow rate and recovery flow rate maybe performed for every shot region or every wafer. The interval betweenexecutions or timings of execution may be changed as needed Even if theexposure process is not performed, outgassing can occur depending on thematerial for the photosensitive agent to be used. In some cases, justcontact of a liquid film with the photosensitive agent can causecontamination to develop. In other cases, outgassing may occur in largeamounts with respect to the necessary exposure amount. Hence, a liquidfilm may be contaminated more than expected.

Under the circumstances, as another method of more actively replacing aliquid film below the final surface of the projection system with a newliquid, a suction port 22 may be provided at an appropriate positionsuch as the center of the flat plate 21, as shown in FIGS. 10A to 10D.Suction units (not shown) such as a suction pump and cylinder areconnected to the suction port 22 to suck a gas or liquid. Morespecifically, as shown in FIGS. 10A to 10D, a liquid is recovered fromthe suction port 22 while the flat plate 21 is fed below the finalsurface 4 s. At the same time, the flow rate to be supplied from theliquid supply nozzle 5 is increased by at least the same amount as theflow rate to be sucked from the suction port 22. With this operation,most the liquid film below the final surface 4 s flows not onlyexternally in the radius direction (toward the liquid recovery nozzle 6)but toward the suction port 22 at the center. Even when the flat plate21 is in a stationary state, the liquid film can always continuously bereplaced with a new liquid (FIGS. 10B and 10C).

With the above-mentioned arrangement, the replacement rate of the liquidbelow the final surface 4 s drastically increases. Liquid replacement isperformed not only on a photosensitive agent susceptible tocontamination but on the flat plate 21, which can employ a material thatis resistant to chemical contamination and can maintain the cleanlinesswith ease. For this reason, a gap below the final surface 4 s can befilled with a liquid of high purity. Thus, influences such as a cloud ofimpurities in the outer air or impurity gas components generated fromthe surface of the photosensitive agent onto the final surface 4 s caneffectively be suppressed.

Liquid film replacement as shown in FIGS. 9A to 9D and 10A to 10D is notlimited to wafer replacement. The liquid film replacement can beperformed as needed even during an exposure sequence of one waferregularly or irregularly.

In the arrangement example shown in FIGS. 9A to 9D and 10A to 10D, theflat plate 21 is arranged on the wafer stage. When a wafer istransferred between the wafer stage and a wafer transport apparatus (notshown), the flat plate 21 is located immediately below the final surface4 s. However, the flat plate 21 may be arranged to be locatedimmediately below the final surface 4 s even when various operationsnecessary before and after exposure or various operations necessary formaintaining and managing the exposure apparatus, such as an alignmentmeasurement step with an off-axis microscope (not shown) beforeexposure. If a plurality of flat plates 21 or a plurality of suctionports 22 need to be arranged at a plurality of wafer stage positionsimmediately below the final surface 4 s, the plurality of flat plates ora plurality of suction ports may be arranged on the wafer stage. Likethe flush plate 19 shown in FIG. 3, the flat plate may be so arranged asto surround the wafer. Alternatively, a plurality of suction ports maybe provided in the flat plate at the positions each of which opposes thefinal surface during respective one of the various operations.

In FIGS. 9A to 9D and 10A to 10D, the flat plate 21 is arranged on thewafer stage 10. A dedicated driving unit (not shown) may be providedsuch that the flat plate 21 can move independently of the wafer stage10. In this case, the flat plate 21 should be driven so as not to form alarge gap between the flat plate 21 and the wafer 9, which is chuckedand fixed on the wafer stage 10. For example, when shifting from thestate in FIG. 9A to that in FIG. 9B or when shifting from the state inFIG. 9C to that in FIG. 9D, the wafer stage 10 and flat plate 21 shouldbe so driven as to move near the final surface 4 s while keeping apositional relationship to be adjacent to each other. At least while thegap between the wafer and the flat plate 21 passes immediately below thefinal surface, the flat plate 21 must be kept flush with the uppersurface of the wafer.

After a liquid film is moved to between the final surface and the flatplate 21, the flat plate 21 maintains the position while the wafer stage10 arbitrarily changes the position. With this operation, the flat plate21 and wafer stage 10 can perform various steps. By providing amechanism which moves the flat plate 21 independently of the wafer stage10, as described above, a space below the final surface 4 s can befilled with a liquid during a period when the wafer stage 10 is used forvarious operations other than exposure. Also, this mechanism eliminatesthe need for a plurality of flat plates or suction ports, and thus thesize of the exposure apparatus can be reduced.

An illuminance uniformity sensor for measuring the illuminancedistribution of exposure light or an absolute illuminance meter formeasuring the absolute illuminance may be provided at an appropriateposition of the flat plate 21. In this case, illuminance uniformity andabsolute illuminance can be measured while a space below the finalsurface 4 s is continuously filled with a liquid without temporarilyrecovering the liquid and in almost the same immersion state as duringexposure. As described above, the flat plate preferably movesindependently of the wafer stage in views of productivity. In the caseof a scanning exposure apparatus, an illuminance uniformity sensor ispreferably arranged on the wafer stage together with the flat platebecause the cumulative illuminance uniformity during scanning can bemeasured.

Use of a function of sucking a gas or liquid from the suction port 22makes it possible to generate an initial liquid film on the finalsurface 4 s more quickly. A method of generating an initial liquid filmusing the suction port 22 will be described with reference to FIGS. 11Ato 11D.

First, the flat plate 21 is moved such that the suction port 22 islocated immediately below almost the center of the liquid supply nozzle5, which is so arranged as to surround the perimeter of the finalsurface 4 s. In this state, a liquid is supplied onto the flat plate 21from the entire perimeter of the liquid supply nozzle 5 (FIG. 11A).

The supplied liquid forms an annular liquid film f in accordance withthe location of the liquid supply nozzle 5 between parallel planes(contiguous members) 20 including the final surface 4 s and the flatplate 21 while a gas g remains at the center. If the liquid is merelycontinuously supplied in this manner, the gas g is trapped by the liquidfilm f, and the gas g is not discharged outside. Accordingly, the spacebelow the final surface 4 s cannot completely be filled with the liquidindefinitely.

Under the circumstances, the gas g is sucked through the suction port 22while the liquid is annually supplied from the liquid supply nozzle 5 tothe space below the final surface 4 s. This suction makes the pressureof the gas g more negative than the pressure of the outer environment.The difference in pressure causes a force to act on the liquid filmformed around the perimeter of the gas g from the perimeter to thesuction port 22, and the liquid film starts spreading quickly toward thesuction port 22 (FIG. 11B). The suction through the suction port 22 iscontinued. When the liquid starts to be sucked through the suction port22, the gap between the final surface 4 s and flat plate 21 is filledwith a liquid film without the gas g (FIG. 11C).

The suction from the suction port 22 is stopped. While the suction isstopped, supply of a liquid from the liquid supply nozzle 5 may bestopped when the wafer stage 10 is stopped. However, when the liquid isin a stationary state, a gas constituting the environment or an impurityis always absorbed in the liquid. Then, the number of air bubbles or theconcentration of an impurity increases, troubles may occur. Morespecifically, air bubbles may not disappear and may remain untilexposure, micro-bubbles may be generated by exposure, or the finalsurface may be clouded by the absorbed impurity. To prevent thesetroubles, it is preferable to continuously supply a liquid even whilethe wafer stage 10 is kept stopped and recover the liquid by at leastthe liquid recovery nozzle 6 while the liquid is kept supplied.

During a period from FIG. 11A to FIG. 11C, the liquid recovery nozzle 6may be stopped. To prevent the liquid from externally splashing due tovibrations, a sudden change in liquid supply amount, or the like, theliquid recovery nozzle 6 is preferably always operated.

Finally, the wafer stage 10 is moved such that the wafer 9 is locatedimmediately below the final surface 4 s while continuously supplying andrecovering the liquid (FIG. 11D).

As described above, if an annular liquid film is grown toward thecenter, a liquid film free from air bubbles can be formed more quickly,and the productivity of the exposure apparatus can be increased. Thismethod does not require movement of the stage. This method is suitableas a method of generating a large-area liquid film when a projectionoptical system with a larger numerical aperture is adopted.

With the suction port 22, the liquid film can be recovered quickly. Morespecifically, when the liquid film is transferred to between the finalsurface 4 s and the flat plate 21, supply of the liquid from the liquidsupply nozzle 5 is stopped, and the liquid is recovered from the suctionport 22. With this operation, most of the liquid film between the finalsurface 4 s and flat plate 21 can quickly be recovered. At this time, tomore completely recover the liquid, the liquid may be sucked whilemoving the wafer stage 10. With the recovery function of the liquidfilm, the liquid film can be recovered immediately. For this reason,maintenance and inspection operation of the apparatus, and remedyoperation against failure can be quickly be performed without any delay.

The method of quickly generating an initial liquid film using thesuction port 22 formed in the flat plate 21 has been described withreference to FIGS. 11A to 11D. Aside from this method, even when aliquid inlet port 23 is provided in the flat plate 21 instead of thesuction port 22, and a liquid is supplied from a liquid supply unit (notshown) through the liquid inlet port 23, as shown in FIGS. 12A to 12C,the initial liquid film can quickly be generated to be described later.More specifically, in FIGS. 12A to 12D, the flat plate 21 is moved suchthat the liquid inlet port 23 is located immediately below almost thecenter of the liquid supply nozzle 5, which is so arranged as tosurround the perimeter of the final surface 4 s. In this state, theliquid is supplied onto the flat plate 21 through the liquid inlet port23. The supplied liquid forms a small liquid film between the finalsurface 4 s and the flat plate 21 including the liquid inlet port 23(FIG. 12A).

When the liquid is further supplied through the liquid inlet port 23,the small liquid film f spreads radially (FIG. 12B), and the gap betweenthe final surface 4 s and the flat plate 21 is supplied with the liquid.

The liquid is recovered as needed through the liquid recovery nozzle 6.This prevents the liquid from leaking from the flat plate 21 or finalsurface 4 s (FIG. 12C).

Use of the liquid inlet port 23 also makes it possible to continuouslyfill the liquid film below the final surface 4 s without externallysplashing or leaking the liquid while the flat plate 21 is in astationary state, as described with reference to FIGS. 10A to 10D. Morespecifically, the liquid is supplied from the liquid inlet port 23, andat the same time, the liquid is recovered through the liquid recoverynozzle 6. At this time, supply of the liquid from the liquid supplynozzle 5 is preferably stopped.

With this operation, the space between the flat plate 21 and the finalsurface 4 s starts to be filled with a liquid from almost the center.This can make the contact area with the ambient gas smaller than amethod of filling the liquid from the perimeter of the final surface 4 susing the suction port 22. A gas dissolved in the initial liquid film oran impurity contained in the gas can be reduced. For this reason, morestable exposure/resolving performance can be obtained, and the effect ofsuppressing a cloud caused by an impurity can further be increased.

The suction port 22 shown in FIGS. 10A to 10D and 11A to 11D may beprovided in the flat plate 21, in addition to the liquid inlet port 23.The liquid inlet port 23 may be used to generate an initial liquid filmor perform liquid film replacement while the suction port 22 may be usedto recover the liquid for replacing the liquid film portion with theambient gas. A single opening portion can implement both of thefunctions of the liquid inlet port 23 and those of the suction port 22.More specifically, a suction unit (not shown) and liquid supply unit(not shown) may communicate with an opening formed in the flat plate 21through a switching valve, and the switching valve may be switched,thereby switching between the functions of the suction port 22 and thoseof the liquid inlet port 23 as needed. This can reduce the size of theflat plate 21.

Use of the flat plate 21, suction port 22, and liquid inlet port 23described with reference to FIGS. 8 to 12C is not limited to acombination with the liquid supply nozzle or liquid recovery nozzledescribed explicitly in this specification. For example, the flat plate21, suction port 22, and liquid inlet port 23 can be used in combinationwith various liquid supply and recovery mechanisms such as a liquidsupply pipe and liquid recovery pipe disclosed in WO99/49504.

FIG. 13 is a perspective view showing the sixth arrangement of thestructures and layout of a liquid supply nozzle and liquid recoverynozzle. The arrangement example shown in FIG. 13 is different from thearrangement example shown in FIG. 6 in that a peripheral portion(projecting portion) 20 c is provided outside the perimeter of a liquidcontact surface 20 a on which the liquid supply nozzles 5 are arrangedand nearer to the wafer than the liquid contact surface 20 a, i.e.,there is a step. The liquid recovery nozzles 6 are arranged annularly onthe peripheral portion 20 c.

Since the peripheral portion 20 c is arranged outside the perimeter ofthe liquid contact surface 20 a on which a liquid film of the finalsurface 4 s is formed and nearer to the wafer than the liquid contactsurface 20 a, a liquid is unlikely to escape outside the liquid contactsurface 20 a. This can reduce the ability to recover a liquid throughthe liquid recovery nozzles 6 and can reduce the sizes of the liquidrecovery nozzles 6 and a liquid recovery unit 8. In the arrangementexample shown in FIG. 13, each liquid recovery nozzle 6 is arranged onthe peripheral portion 20 c. However, the liquid recovery nozzles may bearranged on, e.g., the liquid contact surface 20 a or may be arranged onboth of the liquid contact surface 20 a and peripheral portion 20 c tomore reliably recover the liquid.

In the arrangement shown in FIG. 13, the peripheral portion 20 c, whichis raised from the liquid contact surface 20 a inside the peripheralportion 20 c, surrounds the perimeter of the final surface 4 s. Forexample, if the moving direction of the wafer is limited, the peripheralportion 20 c or stepped portion may be arranged only on the downstreamside of the moving direction of the wafer. In this case, the length ofthe peripheral portion 20 c or stepped portion is desirably equal to orlarger than that of the liquid recovery nozzle 6.

Each of the ports of the liquid supply nozzles 5 and liquid recoverynozzles 6 may be arranged as a mere opening. However, to reducenonuniformity of the liquid supply amount or recovery amount and preventliquid dripping, a porous plate or porous member with fine pores ispreferably provided to each port. A porous member formed by sintering afibrous or particulate metal material or inorganic material isparticularly preferable. As a material for the porous plate or member (amaterial used for at least the surface), stainless, nickel, alumina, andquartz glass are preferable in views of affinity for pure water or afluorinated solution used as an immersion medium.

FIG. 14 is a perspective view of the seventh arrangement example of thestructures and layout of the liquid supply nozzle and liquid recoverynozzle. The arrangement example shown in FIG. 14 is different from thefirst to sixth arrangement examples in that an inert gas outlet portion24 is provided at the outermost portion, which surrounds the finalsurface 4 s.

The inert gas outlet portion (outlet ring) 24 communicates with an inertgas supply unit (not shown) and is arranged to eject an inert gas towardthe wafer or flat plate arranged below at almost a constant rate. Whilea liquid film is formed between the final surface 4 s and the wafer orflat plate, an inert gas is ejected from the inert gas outlet portion24. By applying a pressure to the liquid film with the inert gas fromthe perimeter side, a liquid constituting the liquid film can beprevented from externally splashing. This functions effectivelyparticularly when the wafer or flat plate moves. The supply of the inertgas presses the liquid film toward the center, and thus the liquid filmcan be prevented from attaching to the surface of the wafer or the flatplate and remaining on it. The supply of the inert gas can also dry thesurface of the wafer or flat plate. If the inert gas is used only to drythe wafer or flat plate, the pressure of the inert gas may be low.

To suppress nonuniformity in the ejecting rate between locations, aporous plate or porous member may be provided to the outlet port of theinert gas outlet portion 24, like the liquid supply nozzle 5. If theinert gas outlet portion 24 comprises a slit nozzle which ejects aninert gas through a fine gap of about 0.1 mm, the consumption amount ofthe inert gas can be suppressed.

With the above-mentioned arrangement, a liquid can more reliably beprevented from remaining on the upper surface of the wafer or flatplate. This eliminates the need for a unit or operation to recover theremaining liquid and contributes to increasing the productivity ofexposure apparatuses and preventing an increase in apparatus size. Inaddition, supply of an inert gas can reduce a period when the surface ofa photosensitive agent applied to the upper surface of the wafer is keptwet and can immediately dry the surface of the photosensitive agent. Thedependence on the wet state, which influences a development step afterexposure of the photosensitive agent, can be minimized. Thus, thephotosensitive agent can be expected to have stable resolvingperformance.

In the arrangement example shown in FIG. 14, the liquid supply nozzle 5and liquid recovery nozzle 6 are arranged on the liquid contact surface20 a, which is almost flush with the final surface 4 s. The peripheralportion 20 c is arranged outside the liquid supply nozzle 5 and liquidrecovery nozzle 6 nearer to the wafer than the liquid contact surface 20a, and the inert gas outlet portion 24 is arranged on the peripheralportion 20 c. The inert gas outlet portion nearer to the wafer than theliquid contact surface 20 a makes it possible to obtain a large pressuredifference with a relatively small gas flow rate, suppress the runningcost of the exposure apparatus, and minimize influences of the inert gason the outside. The effect of the inert gas outlet portion can beobtained even if the inert gas outlet portion 24 is arranged within theliquid contact surface 20 a. In the arrangement examples shown in FIGS.3 to 5, an inert gas outlet portion whose length is equal to or largerthan that of the liquid supply nozzle 5 or liquid recovery nozzle 6 canbe provided outside the liquid supply nozzle 5 and liquid recoverynozzle 6 and upstream in the moving direction of the wafer.

Assume that a gas suction portion (suction ring) (not shown) is providedaround the perimeter of the inert gas outlet portion 24 to suck andrecover an inert gas ejected from the inert gas outlet portion 24 anddischarge the sucked inert gas to a place which does not influence thesurroundings of the exposure region. In this case, influences of theinert gas on the surroundings of the exposure region can be minimized. Atypical example of the influences of the inert gas on the surroundingsof the exposure region will be described. For example, the inert gasflows into the optical path of an interferometer which measures theposition of a wafer stage or the optical path of an optical focussensor, components of the gas in the optical path become nonuniform inviews of time or space. This causes fluctuating measurement values andresults in a measuring error.

As the inert gas, air or nitrogen from which moisture or an impuritysuch as an organic substance, acidic gas, or alkaline gas that may causeclouds in an optical system or may influence a photosensitive agent issufficiently removed is appropriately used. Particularly use of nitrogencan prevent oxygen in the outer air from dissolving in the liquid withwhich the space below the final surface is filled. This use can preventthe contact surface with the liquid from being oxidized and corrodedwhen pure water or functional water is employed as the liquid.

FIG. 15 is a view showing a preferred arrangement example of the liquidsupply nozzle 5. The outlet port of each of the liquid supply nozzles 5shown in FIGS. 3 to 8, 13, and 14 has a slit-like shape. On the otherhand, in the arrangement example shown in FIG. 15, one nozzle unit(discharge unit) 5 has n (a plurality of) nozzles J1 to Jn. Thesenozzles J1 to Jn are connected to the liquid supply unit 7 throughon-off valves V1 to Vn, respectively. By switching the operation of eachof the valves V1 to Vn corresponding to the nozzles J1 to Jn, supply ofa liquid can be started/stopped separately.

Such nozzles may be arranged not only in one line but in a plurality oflines. In this case, the supply flow rate can be increased, and a liquidfilm can be formed to have a complicated shape.

The nozzle unit 5 comprising a plurality of nozzles can be controlled inthe following manner. When immersion is to be performed from theperipheral border of the wafer, as shown in FIG. 16, only the on-offvalves corresponding to ones of the plurality of nozzles under which thewafer is positioned are opened to supply the liquid. As the wafer moves,the on-off valves corresponding to ones of the plurality of nozzlesunder which the wafer comes are sequentially opened to further supplythe liquid onto the wafer. This can prevent the liquid from leaking fromthe wafer. This reduces the unit load for recovering the liquid.

FIG. 16 shows a case wherein the wafer moves and enters a region belowthe line of nozzles. The same applies to a case wherein the wafer comesoff the region below the line of nozzles. Alternatively, a flush platemay be provided outside the wafer. In this case, supply of the liquidfrom each nozzle only needs to be controlled in accordance with the edgeof the flush plate. This can minimize the size of the flush plate. As aresult, the moving distance of the wafer can be reduced, and the size ofthe apparatus can be reduced.

In the arrangement example shown in FIG. 15, supply/stop of the liquidfrom each unit of the nozzle unit 5 is controlled by opening/closing thecorresponding on-off valve. Alternatively, a function ofdischarging/stopping droplets can be embedded in each nozzle of thenozzle unit, as in, e.g., an inkjet printer. In addition to continuoussupply of the liquid, a substantially continuous liquid film can beformed by discharging droplets at a high frequency. More specifically,the structures and functions of, e.g., a bubble jet nozzle, thermal jetnozzle, or piezo-jet nozzle can be used.

According to the preferred embodiment of the present invention, in aprojection exposure apparatus using immersion, a liquid film can begenerated between a final surface and a substrate in a short period oftime without splashing droplets. Also, generation of micro-bubblesduring projection exposure can be suppressed. In addition, the need foroperation of separately recovering the liquid for each substrate, foreach alignment step before exposure, or for each step of maintaining theperformance of the exposure apparatus is eliminated. The projectionoptical system final surface can be coated with a liquid always havinghigh purity, and the contact area with the ambient atmosphere can bereduced. Accordingly, a predetermined exposure and resolving performancecan stably be obtained, and clouds due to an impurity contained in theenvironment or photosensitive agent can be suppressed or prevented. Thisallows high-precision and stable projection exposure without increasingthe scale of an exposure apparatus and decreasing the productivity ofthe exposure apparatus. A fine pattern can be transferred onto asubstrate stably and satisfactorily.

The manufacturing process of a semiconductor device using theabove-mentioned exposure apparatuses will be described next. FIG. 17shows the flow of the whole manufacturing process of the semiconductordevice. In step 1 (circuit design), a semiconductor device circuit isdesigned. In step 2 (mask formation), a mask having the designed circuitpattern is formed.

In step 3 (wafer manufacture), a wafer is manufactured by using amaterial such as silicon. In step 4 (wafer process) called a preprocess,an actual circuit is formed on the wafer with the above-mentionedexposure apparatus by lithography using the prepared mask and wafer.Step 5 (assembly) called a post-process is the step of forming asemiconductor chip by using the wafer formed in step 4, and includes anassembly process (dicing and bonding) and packaging process (chipencapsulation). In step 6 (inspection) the semiconductor devicemanufactured in step 5 undergoes inspections such as an operationconfirmation test and durability test of the semiconductor devicemanufactured in step 5. After these steps, the semiconductor device iscompleted and shipped (step 7).

The wafer process in step 4 comprises the following steps. Morespecifically, the wafer process includes an oxidation step of oxidizingthe wafer surface, a CVD step of forming an insulating film on the wafersurface, an electrode formation step of forming an electrode on thewafer by vapor deposition, an ion implantation step of implanting ionsin the wafer, a resist processing step of applying a photosensitiveagent to the wafer, an exposure step of transferring the circuit patternonto the wafer having undergone the resist processing step using theabove-mentioned exposure apparatus, a development step of developing thewafer exposed in the exposure step, an etching step of etching a portionexcept for the resist image developed in the development step, and aresist removal step of removing an unnecessary resist after etching.These steps are repeated to form multiple circuit patterns on the wafer.

The present invention can increase the practicality of an exposuretechnique using immersion and, more specifically, more reliably fill thegap between the final surface of a projection optical system and asubstrate with a liquid, suppress contamination on the final surface ofthe projection optical system, simplify the structure of an exposureapparatus and reduce the size of the exposure apparatus, or the like.

As many apparently widely different embodiments of the present inventioncan be made without departing from the spirit and scope thereof, it isto be understood that the invention is not limited to the specificembodiments thereof except as defined in the appended claims.

1-44. (canceled)
 45. An exposure apparatus which exposes a substrate toa pattern of an original via a projection optical system, with a gapbetween the projection optical system and the substrate being filledwith liquid, the apparatus comprising: an ejection member configured toeject a gas through an ejection port outside the liquid; and a suctionmember configured to suck the gas through a suction port outside theliquid, wherein the suction port is arranged to be more distant than theejection port from a center of an optical axis on a final surface of theprojection optical system.